12

Crystallinity and strain control growth of SiGe using ion sputtering technique

Year:
2006
Language:
english
File:
PDF, 247 KB
english, 2006
14

Fundamental properties of ECR plasma CVD and hydrogen-induced low temperature Si epitaxy

Year:
2001
Language:
english
File:
PDF, 309 KB
english, 2001
17

Limited reaction growth of YSZ (ZrO2:Y2O3) thin films for gate insulator

Year:
2002
Language:
english
File:
PDF, 310 KB
english, 2002
20

Epitaxial growth of SiGe thin films by ion-beam sputtering

Year:
1997
Language:
english
File:
PDF, 469 KB
english, 1997